Energy Efficiency-Focused Components
ROHM Semiconductor Debuts the 650V GaN HEMTs
Kalin Ned — March 6, 2025
ROHM Semiconductor has announced that its EcoGaN™ series of 650V GaN HEMTs — which stands for Gallium Nitride High-Electron-Mobility Transistors — in the TOLL package has been adopted by Murata Power Solutions for use in AI server power supplies. This collaboration aims to enhance the efficiency and miniaturization of power supply units while addressing the growing energy demands of AI technologies.
The integration of ROHM Semiconductor's GaN HEMTs, which are known for their low-loss operation and high-speed switching capabilities, enables Murata’s 5.5kW AI server power supplies to achieve higher power density and improved performance.
Mass production of these components is expected to begin in 2025. The innovation targets the needs of advanced AI servers that require robust and efficient power solutions. The partnership highlights the potential of GaN technology to reduce switching losses, minimize the size of magnetic components, and support higher operating frequencies.
